SINOPLE

• Free standing GaN substrates separated from sapphire were used as seeds for HVPE
• Cystals thicker than 2 mm were deposited in a few subsequent growth runs.
• Growth rate 20µm/h- 200µm/h

• Atomically flat m-plane GaN for miscut along [11-26]

• Analysis of local lattice parameter with world 1.6 pm precision
• Analysis In content down 2% possible
• Within 1 year a complete software package for contrast simulation and strain analyis has been developed

For both polarities:

• Self-surfactant effect operative under In-rich and Ga-rich regimes
• Structures with In in subsurface layers stable under In-rich, N-rich conditions

• High nitrogen flux allows to grow high quality InGaN in PAMBE
• Record for electrically pumped nitride MBE laser diodes at 458 nm.
• Continuous wave laser-diodes on low dislocation GaN were demonstrated:
  λ = 450 nm, P_max= 60 mW, t > 5000 h (threading disloction density =1x10⁴ cm^-2)