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Surface engineered InGaN heterostructures on N-polar and nonpolar substrates for green light emitters
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Highlights
Bulk growth:
polar substrates
Free standing GaN substrates separated from sapphire were used as seeds for HVPE
Cystals thicker than 2 mm were deposited in a few subsequent growth runs.
Growth rate 20µm/h- 200µm/h
Growth:
step-flow growth on
m-plane GaN
Atomically flat m-plane GaN for miscut along [11-26]
Characterization:
Analysis of In-fluctuations
Analysis of local lattice parameter with world 1.6 pm precision
Analysis In content down 2% possible
Within 1 year a complete software package for contrast simulation and strain analyis has been developed
Theory:
surface phase diagram
For both polarities:
Self-surfactant effect operative under In-rich and Ga-rich regimes
Structures with In in subsurface layers stable under In-rich, N-rich conditions
Devices:
MBE laser
High nitrogen flux allows to grow high quality InGaN in PAMBE
Record for electrically pumped nitride MBE laser diodes at 458 nm.
Continuous wave laser-diodes on low dislocation GaN were demonstrated:
λ = 450 nm, P
max
= 60 mW, t > 5000 h (threading disloction density =1x10
4
cm
-2
)
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